We demonstrate the self-formation of hexagonal nanotemplates on GaAs (111)B substrates patterned with arrays of inverted tetrahedral pyramids during metal-organic vapor phase epitaxy and its role in producing high-symmetry, site-controlled quantum dots (QDs). By combining atomic force microscopy measurements on progressively thicker GaAs epitaxial layers with kinetic Monte Carlo growth simulations, we demonstrate self-maintained symmetry elevation of the QD formation sites from three-fold to six-fold symmetry. This symmetry elevation stems from adatom fluxes directed towards the high-curvature sites of the template, resulting in the formation of a fully three-dimensional hexagonal template after the deposition of relatively thin GaAs layers. We identified the growth conditions for consistently achieving a hexagonal pyramid bottom, which are useful for producing high-symmetry QDs for efficient generation of entangled photons.
Self-formation of hexagonal nanotemplates for growth of pyramidal quantum dots by metalorganic vapor phase epitaxy on patterned substrates / Surrente, A; Carron, R; Gallo, P; Rudra, A; Dwir, B; Kapon, E. - In: NANO RESEARCH. - ISSN 1998-0124. - 9:11(2016), pp. 3279-3290. [10.1007/s12274-016-1206-7]
Self-formation of hexagonal nanotemplates for growth of pyramidal quantum dots by metalorganic vapor phase epitaxy on patterned substrates
Surrente A;
2016
Abstract
We demonstrate the self-formation of hexagonal nanotemplates on GaAs (111)B substrates patterned with arrays of inverted tetrahedral pyramids during metal-organic vapor phase epitaxy and its role in producing high-symmetry, site-controlled quantum dots (QDs). By combining atomic force microscopy measurements on progressively thicker GaAs epitaxial layers with kinetic Monte Carlo growth simulations, we demonstrate self-maintained symmetry elevation of the QD formation sites from three-fold to six-fold symmetry. This symmetry elevation stems from adatom fluxes directed towards the high-curvature sites of the template, resulting in the formation of a fully three-dimensional hexagonal template after the deposition of relatively thin GaAs layers. We identified the growth conditions for consistently achieving a hexagonal pyramid bottom, which are useful for producing high-symmetry QDs for efficient generation of entangled photons.File | Dimensione | Formato | |
---|---|---|---|
Surrente_Hexagonal-nanotemplates.pdf
solo gestori archivio
Tipologia:
Versione editoriale (versione pubblicata con il layout dell'editore)
Licenza:
Tutti i diritti riservati (All rights reserved)
Dimensione
2.25 MB
Formato
Adobe PDF
|
2.25 MB | Adobe PDF | Contatta l'autore |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.